17 results
Anisotropic Charge Transport in Organic Single Crystals Based on Dipolar Molecules
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1091 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1091-AA11-66
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- 2008
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Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2
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- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B06-01
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- 2006
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Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF12-11
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- 2005
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GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 193-195
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- July 2004
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Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 345-348
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- July 2004
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“Recovery” Effect of Electron Induced Damage in 4H-SiC Schottky Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 792 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, R10.6
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- 2003
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Dislocation-related deep states induced by irradiation in HVPE n-GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L11.32
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- 2002
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Radiative recombination processes of thermal donors in silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 692 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, H6.30.1
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- 2001
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Light-Excitation-Based Spectroscopy of Electronic Defects in Novel Materials
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- Journal:
- MRS Online Proceedings Library Archive / Volume 588 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 51
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- 1999
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Evaluating the Denuded Zone Depth by Measurements of the Recombination Activity of Bulk Defects
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- Journal:
- MRS Online Proceedings Library Archive / Volume 510 / January 1998
- Published online by Cambridge University Press:
- 10 February 2011, 569
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- January 1998
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Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 487 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 447
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- 1997
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Analyses of Compensation Related Defects in II-VI Compounds
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- Journal:
- MRS Online Proceedings Library Archive / Volume 487 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 269
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- 1997
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Investigation Of Deep Energy Levels In II-VI Compounds
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- MRS Online Proceedings Library Archive / Volume 442 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 605
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- 1996
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Electrical and Optical Properties of Defects by Complementary Spectroscopies
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- Journal:
- MRS Online Proceedings Library Archive / Volume 411 / 1995
- Published online by Cambridge University Press:
- 10 February 2011, 177
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- 1995
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Influence of Ohmic Contacts on Semi-Insulating GaAs Detector Performances
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- MRS Online Proceedings Library Archive / Volume 406 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 431
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- 1995
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Defects Induced by Protons and γ-Rays in Semi-Insulating Gaas Detectors
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- MRS Online Proceedings Library Archive / Volume 373 / 1994
- Published online by Cambridge University Press:
- 16 February 2011, 523
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- 1994
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Recombination Activity of Individual Extended Defects in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 262 / 1992
- Published online by Cambridge University Press:
- 03 September 2012, 223
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- 1992
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